![]() Around 1970, pMOS circuits with aluminum gate metal and wiring were dominant. The transition from dopant diffusion to ion implantation, from thermal oxidation to oxide deposition, from a metal gate to a poly-silicon gate, from wet chemical etching to dry etching and more recently from aluminum (with 2% copper) wiring to copper wiring has provided vastly superior analog and digital CMOS circuits.Ī quick look at the history of the MOSFET fabrication process reveals that it has evolved significantly over the years. Starting with a ten-micron pMOS process with an aluminum gate and a single metallization layer around 1970, the technology has evolved into a tenth-micron self-aligned-gate CMOS process with up to five metallization levels. ![]() ![]() The MOSFET circuit technology has dramatically changed over the last three decades. 7.7 MOSFET circuits and technology Chapter 7: MOSFETsħ.7 MOSFET circuits and technology 7.7.1. MOSFET fabrication process 7.7.2. Poly-silicon gate technology 7.7.3. CMOS 7.7.4. MOSFET Memory
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